| PART |
Description |
Maker |
| BAR81W |
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
|
TY Semiconductor Co., Ltd
|
| BAR80 Q62702-A1084 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) SILICON, PIN DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SNT-100-BK-G |
.100 [2.54] C.L. SHUNT ASSEMBLY
|
Samtec, Inc
|
| 15-38-1024 0015381024 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits, with Open End
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits, with Open End
|
Molex Electronics Ltd.
|
| 15-38-1026 A-7859-2A164 7859-2A164N 0015381026 |
2.54mm (.100") Pitch C-Grid庐 Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings, All Over Tin (Sn), 2 Circuits,with Open End
|
Molex Electronics Ltd.
|
| 0015291027 7859-2A561N |
2.54mm (.100) Pitch C-Grid? Shunt Terminal Housings
|
Molex Electronics Ltd.
|
| 0900590009 90059-0009 |
2.54mm (.100) Pitch C-Grid? Micro Shunt, Low Profile, 15mm Select Gold (Au) with Gold (Au) Flash Plating
2.54mm (.100) Pitch C-Grid庐 Micro Shunt, Low Profile, 15mm" Select Gold (Au) with Gold (Au) Flash Plating
MOLEX Connector
|
Molex Electronics Ltd.
|
| WSBM8518 |
Power Metal Strip? Battery Shunt Resistor W/Molded Enclosure Very Low Value (100 μ?
|
Vishay Siliconix
|
| UPC1945 UPC1945TA UPC1945TA-E1 UPC1945TA-E2 |
Low-voltage-compatible high-precision variable-shunt type stabilization power
ADJUSTABLE PRECISION SHUNT REGULATORS
|
NEC[NEC]
NEC Corp.
|
| TC8104M32-102A1-01 |
1M X 32 MULTI DEVICE DRAM CARD, 100 ns, XMA88
|
OKI ELECTRIC INDUSTRY CO LTD
|
| MD32256FKXI-10/AD6 |
256K X 32 MULTI DEVICE DRAM MODULE, 100 ns, PDIP48
|
|
